Automated measurement of the dynamic parameters of the IGBT and FRD semiconductor modules

Drakin A. Yu., Zotin V. F., Shkolin A. N.

The article devotes to automating the measurement of the dynamic parameters of power semiconductor modules based on bipolar transistors with insulated gate bipolar transistors (IGBT) and fast recovery diodes (FRD). The authors provide solutions to improve the accuracy of measuring dynamic parameters when developing a device for automated measurements. The circuitry of the main assemblies, technical characteristics and software of a meter designed to automate the monitoring of capacitive parameters of power modules based on transistors and diodes are considered. The results of experimental tests confirming the effectiveness of the proposed method of technical implementation are given. The implementation of the software and hardware complex is described and directions for its further improvement are proposed. The material of the article is of interest to the developers and users of the means of equipment for automated testing of electric parameters of semiconductor devices.

Keywords:automated test equipment, capacitive parameters, power semiconductor modules, IGBT, FRD, MatLab.